2SD2704KT146 - Rohm Semiconductor

Manufacturer Part Number

2SD2704KT146

Manufacturer

LAPIS Technology

Introduction

The 2SD2704KT146 is a NPN bipolar junction transistor (BJT) designed for use in various electronic circuits and applications.

Product Features and Performance

High power handling capability of up to 200 mW

Collector-emitter breakdown voltage of 20 V

Collector current of up to 300 mA

Low collector-emitter saturation voltage of 100 mV @ 3 mA, 30 mA

High DC current gain (hFE) of 820 @ 4 mA, 2 V

Transition frequency of 35 MHz

Product Advantages

Compact surface mount package (TO-236-3, SC-59, SOT-23-3)

RoHS3 compliant for environmental friendliness

Tape and reel packaging for automated assembly

Key Technical Parameters

Power Rating: 200 mW

Collector-Emitter Breakdown Voltage: 20 V

Collector Current: 300 mA

Collector Cutoff Current: 100 nA

DC Current Gain (hFE): 820 @ 4 mA, 2 V

Transition Frequency: 35 MHz

Quality and Safety Features

RoHS3 compliant for environmental responsibility

Undergoes rigorous quality control and testing

Compatibility

The 2SD2704KT146 is compatible with a wide range of electronic circuits and applications that require a high-performance NPN bipolar junction transistor.

Application Areas

Amplifier circuits

Switching circuits

Logic circuits

General-purpose electronic applications

Product Lifecycle

The 2SD2704KT146 is an active product and is not nearing discontinuation. Replacement or upgrade options are available if needed.

Key Reasons to Choose This Product

High power handling capability

Excellent electrical performance characteristics

Compact surface mount package for efficient board space utilization

RoHS3 compliance for environmental sustainability

Reliable quality and safety features

Compatibility with a wide range of electronic applications