Manufacturer Part Number
2SD1898T100R
Manufacturer
LAPIS Technology
Introduction
The 2SD1898T100R is a high-performance NPN bipolar junction transistor (BJT) manufactured by LAPIS Technology. It is designed for use in a wide range of electronic applications.
Product Features and Performance
High-frequency operation up to 100 MHz
High current handling capability up to 1A
Low collector-emitter saturation voltage (VCE(sat)) of 400 mV @ 20 mA, 500 mA
High DC current gain (hFE) of 180 @ 500 mA, 3 V
Capable of operating at high temperatures up to 150°C
Product Advantages
Excellent high-frequency performance
High current capability
Low saturation voltage for efficient power conversion
Reliable operation in high-temperature environments
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 80 V
Current Collector (Ic) (Max): 1 A
Current Collector Cutoff (Max): 1A (ICBO)
Power Max: 2 W
Operating Temperature: 150°C (TJ)
Quality and Safety Features
RoHS3 compliant
Housed in a compact TO-243AA surface-mount package
Compatibility
The 2SD1898T100R is compatible with a wide range of electronic circuits and systems that require high-performance NPN bipolar junction transistors.
Application Areas
Power amplifiers
Switching circuits
Voltage regulators
Motor control
Industrial electronics
Product Lifecycle
The 2SD1898T100R is an active product and is not nearing discontinuation. Replacement or upgrade options are available from LAPIS Technology.
Key Reasons to Choose This Product
Excellent high-frequency performance up to 100 MHz
High current handling capability up to 1A
Low saturation voltage for efficient power conversion
Reliable operation in high-temperature environments up to 150°C
RoHS3 compliant for environmental compliance
Compact surface-mount package for efficient board layout