2SD1782KT146R - Rohm Semiconductor

Manufacturer Part Number

2SD1782KT146R

Manufacturer

LAPIS Technology

Introduction

High-frequency NPN bipolar junction transistor in a small SMT package for use in various electronic circuits.

Product Features and Performance

Designed for high-frequency applications up to 120 MHz

High DC current gain of 180 minimum at 100 mA, 3 V

Low collector-emitter saturation voltage of 500 mV maximum at 50 mA, 500 mA

Low collector cutoff current of 500 nA maximum

Power dissipation of 200 mW maximum

Operating temperature up to 150°C

Product Advantages

Small, space-saving SMT package

High-frequency performance

High current gain

Low saturation voltage

Low leakage current

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 80 V maximum

Collector Current: 500 mA maximum

Power Dissipation: 200 mW maximum

Operating Temperature: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Tape and reel packaging for automated assembly

Compatibility

Suitable for use in various electronic circuits and applications requiring high-frequency, high-gain bipolar transistors

Application Areas

RF amplifiers

Switching circuits

Driver circuits

Oscillator circuits

General-purpose amplification

Product Lifecycle

Current production model, not nearing discontinuation

Replacements and upgrades may be available from the manufacturer or other suppliers

Key Reasons to Choose

High-frequency performance up to 120 MHz

High current gain of 180 minimum

Low saturation voltage and leakage current

Small, space-saving SMT package

RoHS3 compliance for environmental safety

Suitability for a wide range of electronic circuit applications