2SC4672T100Q - Rohm Semiconductor

Manufacturer Part Number

2SC4672T100Q

Manufacturer

LAPIS Technology

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT) Single

Product Features and Performance

RoHS3 Compliant

Manufacturer's Packaging: MPT3

Base Product Number: 2SC4672

Package/Case: TO-243AA

Supplier Device Package: MPT3

Package: Tape & Reel (TR)

Operating Temperature: 150°C (TJ)

Power Max: 500 mW

Voltage Collector Emitter Breakdown (Max): 50 V

Current Collector (Ic) (Max): 2 A

Current Collector Cutoff (Max): 100nA (ICBO)

Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A

Transistor Type: NPN

DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V

Frequency Transition: 210MHz

Mounting Type: Surface Mount

Product Advantages

RoHS3 compliant

High power rating of 500 mW

High collector current of up to 2 A

High transition frequency of 210 MHz

Surface mount package for compact design

Key Technical Parameters

Power Rating: 500 mW

Collector-Emitter Breakdown Voltage: 50 V

Collector Current (Max): 2 A

Collector Cutoff Current: 100nA

Vce Saturation Voltage: 350mV @ 50mA, 1A

DC Current Gain: 120 @ 500mA, 2V

Transition Frequency: 210 MHz

Quality and Safety Features

RoHS3 compliant

Compatibility

Suitable for a wide range of electronic circuit applications requiring a high-power, high-frequency NPN bipolar junction transistor

Application Areas

Power amplifiers

Switch-mode power supplies

Motor control circuits

RF and microwave circuits

Product Lifecycle

This product is an active and widely available part from LAPIS Technology.

Several Key Reasons to Choose This Product

High power rating of 500 mW

High collector current capability of up to 2 A

High transition frequency of 210 MHz

RoHS3 compliance for environmentally-friendly applications

Surface mount package for compact design

Widely available and actively supported by the manufacturer