Manufacturer Part Number
2SC2412KT146R
Manufacturer
LAPIS Technology
Introduction
High-performance NPN bipolar transistor suitable for a variety of electronic circuit applications.
Product Features and Performance
High current gain (hFE) of 180 min at 1mA, 6V
High transition frequency of 180MHz
Low collector-emitter saturation voltage (VCE(sat)) of 400mV max at 5mA, 50mA
Supports high collector current up to 150mA
Operates at high junction temperature up to 150°C
Designed for surface mount applications
Product Advantages
Excellent high-frequency performance
High current capability
Compact surface mount package
Reliable operation at high temperatures
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 50V
Collector Cutoff Current (ICBO): 100nA max
Power Dissipation: 200mW
Package: TO-236-3, SC-59, SOT-23-3
Quality and Safety Features
RoHS3 compliant
Manufactured in ISO certified facilities
Compatibility
Suitable for a wide range of electronic circuits and applications requiring a high-performance NPN bipolar transistor.
Application Areas
Amplifier circuits
Switching circuits
Power management
RF and microwave applications
Product Lifecycle
This product is currently in production and actively supported by the manufacturer. Replacement or upgrade options may be available for future product changes.
Key Reasons to Choose This Product
Exceptional high-frequency performance
High current handling capability
Reliable operation in high-temperature environments
Space-efficient surface mount package
RoHS compliance for environmentally conscious designs