Manufacturer Part Number
2SB1188T100R
Manufacturer
LAPIS Technology
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
Surface Mount Packaging
Operating Temperature up to 150°C
Power Rating up to 2 Watts
Collector-Emitter Breakdown Voltage up to 32 Volts
Collector Current up to 2 Amperes
Collector Cutoff Current up to 1 Ampere
Low Collector-Emitter Saturation Voltage
High DC Current Gain up to 180
Transition Frequency up to 100 MHz
Product Advantages
Suitable for high-power, high-speed switching and amplification applications
Compact surface mount package for space-constrained designs
Excellent thermal performance for reliable operation in high-temperature environments
Key Technical Parameters
Package: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
RoHS Compliance: RoHS3 Compliant
Quality and Safety Features
Manufacturer's Packaging: MPT3
Tape and Reel (TR) Packaging
Compatibility
Suitable as a replacement or upgrade for similar bipolar transistor products
Application Areas
Power supplies
Amplifiers
Switching circuits
Industrial electronics
Automotive electronics
Product Lifecycle
Current production, no known plans for discontinuation
Replacement or upgraded products may be available in the future
Key Reasons to Choose This Product
Reliable high-power and high-speed performance
Compact surface mount package for space-efficient designs
Excellent thermal management for reliable operation in harsh environments
RoHS compliance for use in environmentally-conscious applications
Widely compatible with similar bipolar transistor products
2SB1188-TRMicro Connectors, Inc.