Manufacturer Part Number
2SB1132T100R
Manufacturer
LAPIS Technology
Introduction
Discrete Semiconductor Product - Bipolar Junction Transistor (BJT), PNP type
Product Features and Performance
Operating Temperature up to 150°C (TJ)
Power Rating up to 2 W
Collector-Emitter Breakdown Voltage up to 32 V
Collector Current up to 1 A
Collector Cutoff Current of 500 nA (ICBO)
Collector-Emitter Saturation Voltage of 500 mV @ 50 mA, 500 mA
DC Current Gain (hFE) of 180 min. @ 100 mA, 3 V
Transition Frequency of 150 MHz
Product Advantages
Suitable for high-power, high-speed switching and amplifier applications
Robust thermal and electrical performance
Key Technical Parameters
Package: TO-243AA, Surface Mount
RoHS3 Compliant
Manufacturer's Packaging: MPT3
Tape & Reel (TR) Packaging
Quality and Safety Features
RoHS3 Compliance for environmental safety
Compatibility
Suitable for a wide range of electronic circuits and systems
Application Areas
High-power, high-speed switching and amplifier circuits
Power management and control systems
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacement or upgrade options available
Key Reasons to Choose This Product
Reliable and robust electrical and thermal performance
Suitable for high-power, high-speed applications
Compact surface-mount packaging
RoHS3 compliance for environmental responsibility