Manufacturer Part Number
2SA1797T100Q
Manufacturer
LAPIS Technology
Introduction
High-power PNP bipolar junction transistor (BJT) suitable for use in various power amplifier and switching applications.
Product Features and Performance
High power handling capability up to 2W
High collector-emitter breakdown voltage up to 50V
High DC current gain of 120 (min.) at 500mA, 2V
High transition frequency of 200MHz
Low collector-emitter saturation voltage of 350mV at 50mA, 1A
Product Advantages
Efficient power handling
High voltage and current capability
Fast switching performance
Low on-state resistance
Key Technical Parameters
Collector-Emitter Breakdown Voltage (max.): 50V
Collector Current (max.): 2A
Collector Cutoff Current (max.): 100nA
DC Current Gain (min.): 120 @ 500mA, 2V
Transition Frequency: 200MHz
Power Dissipation: 2W
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Compatibility
Surface mount package (TO-243AA)
Tape and reel packaging
Application Areas
Power amplifiers
Switching circuits
Audio power stages
Industrial controls
Automotive electronics
Product Lifecycle
Currently in production
Replacement parts and upgrades available
Key Reasons to Choose This Product
High power handling capability
Excellent voltage and current ratings
Fast switching performance
Low saturation voltage for efficient operation
Compact surface mount package
RoHS compliance for environmental friendliness
2SA1802TAEC Product (Toshiba Electronic Devices and Stora