Manufacturer Part Number
2SA1037AKT146R
Manufacturer
LAPIS Technology
Introduction
This product is a single bipolar junction transistor (BJT) in a surface mount package.
Product Features and Performance
Capable of operating at temperatures up to 150°C (TJ)
Maximum power dissipation of 200 mW
Collector-emitter breakdown voltage up to 50 V
Collector current up to 150 mA
Collector cutoff current up to 100 nA (ICBO)
Collector-emitter saturation voltage up to 500 mV @ 5 mA, 50 mA
DC current gain (hFE) of at least 180 @ 1 mA, 6 V
Transition frequency up to 140 MHz
Product Advantages
Compact surface mount package
Suitable for high temperature applications
Excellent electrical characteristics
Key Technical Parameters
Package: TO-236-3, SC-59, SOT-23-3
Transistor Type: PNP
RoHS Compliance: RoHS3 Compliant
Quality and Safety Features
Manufactured in a RoHS3 compliant process
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
Suitable for use in various electronic devices and circuits, such as amplifiers, switches, and logic gates
Product Lifecycle
Current product offering, no discontinuation plans identified
Replacement or upgrade options may be available from the manufacturer
Several Key Reasons to Choose This Product
Compact surface mount package
Capable of operating at high temperatures
Excellent electrical characteristics, including high voltage, current, and frequency capabilities
RoHS3 compliance for environmentally-friendly applications
