Manufacturer Part Number
THGJFGT1E45BAIL
Manufacturer
Toshiba Memory America
Introduction
The THGJFGT1E45BAIL is a high-capacity, high-performance NAND flash memory module from Toshiba Memory America. This e•MMC™ product offers a storage capacity of 2Tbit and utilizes the latest UFS 3.1 interface for fast data transfer speeds.
Product Features and Performance
2Tbit NAND flash memory capacity
UFS 3.1 interface with up to 1.16 GHz clock frequency
Supports operating voltages of 2.4V ~ 3.6V and 2.7V ~ 3.6V
Wide operating temperature range of -25°C to 85°C
153-WBGA package with 153-BGA (11.5x13) form factor
Product Advantages
Massive storage capacity for data-intensive applications
High-speed data transfer with UFS 3.1 interface
Wide voltage and temperature range for versatile deployment
Compact and space-saving 153-WBGA package
Key Reasons to Choose This Product
Industry-leading storage capacity to meet growing data demands
Superior performance with UFS 3.1 interface for fast data access
Robust design with wide operating voltage and temperature range
Optimized for space-constrained applications with compact package
Quality and Safety Features
Reliable NAND flash technology from a trusted manufacturer
Stringent quality control and testing to ensure product reliability
Compatibility
This e•MMC™ module is designed to be compatible with a variety of embedded systems and mobile devices.
Application Areas
Smartphones and tablets
Automotive infotainment systems
Industrial and IoT devices
Portable media players
Enterprise-grade storage solutions
Product Lifecycle
The THGJFGT1E45BAIL is an active product, and Toshiba Memory America continues to support this model. While there may be newer or alternative models available, customers are advised to contact our sales team through our website for the latest product information and availability.
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