Manufacturer Part Number
TH58NVG2S3HBAI4
Manufacturer
Toshiba Memory America
Introduction
High-capacity SLC NAND flash memory for industrial applications
Product Features and Performance
4Gbit storage capacity
SLC NAND technology for high reliability
Parallel memory interface for fast data transfer
512M x 8 Memory Organization
Write Cycle Time of 25ns per Word/Page
Product Advantages
Robust performance in extreme temperatures
Durable for high endurance and longevity
SLC technology for greater data integrity
Key Technical Parameters
Memory Size: 4Gbit
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Write Cycle Time - Word, Page: 25ns
Quality and Safety Features
Operates reliably in a wide temperature range
Complies with industry standards for quality and safety
Compatibility
Parallel interface for compatibility with a broad range of devices
Application Areas
Industrial control systems
Telecommunications
Automotive electronics
Internet of Things (IoT) devices
Product Lifecycle
Active product status
Not near discontinuation
Several Key Reasons to Choose This Product
Reliable data storage in harsh environments
SLC NAND technology provides high read/write endurance
Fast access time enhances system performance
Wide voltage range enables flexible power management
Optimally sized for a variety of applications requiring mid-range capacity
TH58DVG5S0ETAK0TAEC Product (Toshiba Electronic Devices and Stora
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