Manufacturer Part Number
TH58BVG2S3HTA00
Manufacturer
Toshiba Memory America
Introduction
High-reliability SLC NAND FLASH Memory
Product Features and Performance
NAND Type: SLC for high endurance
Memory Size: 4Gbit for data-intensive applications
Organisation: 512M x 8 offering ample storage structure
Interface: Parallel for easy integration
Write Cycle Time: 25 ns for fast write operations
Access Time: 25 ns enabling quick data retrieval
Voltages Supported: Ranging from 2.7V to 3.6V for flexible power requirements
Product Advantages
Robust error management for data integrity
Extended temperature range for versatility in different environments
SLC technology provides longer life cycles
Key Technical Parameters
Memory Size: 4Gbit
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Organization: 512M x 8
Access Time: 25 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Quality and Safety Features
Endurance and reliability of SLC NAND
Compliance with rigorous industry standards
Compatibility
Parallel interface for compatibility with numerous controllers and chipsets
TSOP packaging widely accepted in electronic assemblies
Application Areas
Embedded systems
Industrial automation
Networking equipment
Aerospace and defense applications
Product Lifecycle
Active product line with no indication of discontinuation
Product line maturity supported by Toshiba's long-term availability
Several Key Reasons to Choose This Product
SLC technology for higher reliability and endurance
Broad operating temperature range suitable for various environments
Fast access times improve system performance
High capacity for data storage needs
Manufacturer's reputation for quality and reliability
Support and longevity guaranteed by Toshiba Memory America
Diverse application suitability from consumer electronics to industrial platforms
