Manufacturer Part Number
TC58CYG2S0HRAIG
Manufacturer
Toshiba Memory America
Introduction
Flash memory component designed for embedding into electronics requiring data storage
Product Features and Performance
Non-Volatile FLASH Memory
FLASH - NAND (Single-Level Cell) Technology
Memory Size of 4 Gbit
SPI Memory Interface with 104 MHz Clock Frequency
Supports a wide range of Operating Temperatures
Product Advantages
High reliability due to SLC NAND technology
Suitable for performance-sensitive applications
Robust storage solution with a high endurance cycle
Key Technical Parameters
Memory Format: FLASH
Memory Size: 4Gbit
Memory Organization: 512M x 8
Clock Frequency: 104 MHz
Voltage - Supply: 1.7V to 1.95V
Operating Temperature: -40°C to 85°C
Quality and Safety Features
Designed to withstand extreme temperatures for industrial use
Compatibility
SPI interface for broad compatibility with microcontrollers and processors
Mounting Type: Surface Mount
Application Areas
Could be used in embedded systems, industrial applications, and IoT devices
Product Lifecycle
Obsolete product with a possibility of limited availability
Potential replacements or upgrades may be available for newer designs
Several Key Reasons to Choose This Product
Offers reliable storage for critical applications
Durable and capable of withstanding harsh operational environments
Suitable for long-term deployment due to non-volatility and endurance
SPI interface ensures compatibility with a wide range of host controllers
TC58DVG02A1FT00TAEC Product (Toshiba Electronic Devices and Stora