Manufacturer Part Number
HIP6602BCB
Manufacturer
renesas-electronics-america
Introduction
The HIP6602BCB is a high-performance, low-side gate driver designed for driving N-channel power MOSFETs in half-bridge configurations. It provides four gate driving channels with independent output control, making it suitable for various power conversion applications.
Product Features and Performance
4 independent gate driving channels
Supports N-channel MOSFET gate driving
Operating voltage range of 10.8V to 13.2V
Fast rise and fall times of 20ns (typical)
Wide operating temperature range of 0°C to 125°C
Product Advantages
Efficient power conversion with fast switching capabilities
Reliable and robust design for demanding applications
Flexibility in driving multiple power MOSFETs
Key Reasons to Choose This Product
Optimized for high-performance power conversion
Proven reliability and long-term durability
Easy integration into various power electronics systems
Quality and Safety Features
Robust design for reliable operation
Thermal protection for safe operation
Compatibility
The HIP6602BCB is designed to be compatible with a wide range of power MOSFET devices and can be integrated into various power conversion applications.
Application Areas
Switch-mode power supplies (SMPS)
Motor drives
Uninterruptible power supplies (UPS)
Industrial and automotive power electronics
Product Lifecycle
The HIP6602BCB is an obsolete product, meaning it is no longer in active production. However, there may be equivalent or alternative models available from Renesas Electronics America or other manufacturers. Customers are advised to contact our website's sales team for more information on available options and alternatives.