Manufacturer Part Number
HIP6601BCB
Manufacturer
Renesas Electronics America
Introduction
The HIP6601BCB is a high-performance half-bridge gate driver IC designed for synchronous power conversion applications. It features low-side and high-side gate drivers with integrated bootstrap diodes, providing a cost-effective and efficient solution for driving N-channel MOSFETs in half-bridge topologies.
Product Features and Performance
Dual N-channel MOSFET gate drivers with integrated bootstrap diodes
Operates from a 10.8V to 13.2V supply voltage
20ns typical rise and fall times
Wide operating temperature range of 0°C to 125°C
Surface mount 8-SOIC package
Product Advantages
Integrated bootstrap diodes simplify circuit design
Fast switching speeds for high-efficiency power conversion
Wide supply voltage and temperature range for versatile applications
Key Reasons to Choose This Product
Optimized for high-performance, high-efficiency synchronous power conversion
Cost-effective solution with integrated features
Reliable operation across a wide range of conditions
Quality and Safety Features
Robust design and high-quality manufacturing
Compliance with relevant safety and environmental standards
Compatibility
The HIP6601BCB is compatible with a variety of N-channel MOSFETs and can be used in a wide range of synchronous power conversion applications.
Application Areas
Switching power supplies
DC-DC converters
Motor drives
Industrial and consumer electronics
Product Lifecycle
The HIP6601BCB is an obsolete product, meaning it is no longer in active production. However, there may be equivalent or alternative models available from Renesas Electronics America or other manufacturers. Customers are advised to contact our website's sales team for more information on available options.