EP4CE15F23C8N - Intel

Manufacturer Part Number

EP4CE15F23C8N

Manufacturer

Intel

Introduction

The EP4CE15F23C8N is part of the Cyclone® IV E series, designed for implementation in embedded FPGAs (Field Programmable Gate Array). It features high performance in a compact 484-BGA package.

Product Features and Performance

Low power consumption

High functionality with 15408 logic elements

963 LABs/CLBs facilitate complex logic functions

516096 total RAM bits for substantial data management

343 I/O pins for versatile connectivity

Supports a voltage supply range from 1.15V to 1.25V

Surface mount package for secure and reliable installation

Compatible with a wide thermal range (0°C to 85°C operating temperature)

Product Advantages

Optimized for low power applications

Robust logic and memory resource integration

Extensive input/output capacity enhances interface flexibility

Compact and efficient BGA packaging

Key Technical Parameters

Number of LABs/CLBs: 963

Number of Logic Elements/Cells: 15408

Total RAM Bits: 516096

Number of I/O: 343

Voltage - Supply: 1.15V ~ 1.25V

Operating Temperature: 0°C ~ 85°C (TJ)

Package: 484-BGA

Mounting Type: Surface Mount

Quality and Safety Features

Operational over a wide range of temperatures (0°C to 85°C)

Designed to adhere to stringent quality standards

Compatibility

Supports a broad voltage supply range (1.15V to 1.25V)

High I/O pin count for versatile system integration

Application Areas

Telecommunications

Networking

Automotive Industries

Consumer Electronics

Industrial Applications

Product Lifecycle

Status: Active

Not currently nearing discontinuation

Replacements or upgrades frequently available given active status

Several Key Reasons to Choose This Product

Efficient power utilization enhances system sustainability

Dense configuration of logic cells supports complex digital functionalities

Extensive I/O options provide high flexibility in system design

Operable across diverse environmental conditions

Developed and backed by Intel, a leader in semiconductor innovation