Manufacturer Part Number
IS64WV51216EDBLL-10CTLA3
Manufacturer
Integrated Silicon Solution Inc.
Introduction
IS64WV51216EDBLL-10CTLA3 is a high-speed, low-power SRAM memory chip specifically designed for high-performance computing and storage systems.
Product Features and Performance
Volatile Memory
SRAM - Asynchronous Technology
8Mbit Memory Size
512K x 16 Memory Organization
Parallel Memory Interface
10ns Write Cycle Time
10ns Access Time
4V to 3.6V Supply Voltage Range
44-TSOP II Surface Mount Package
Operational over the Temperature range of -40°C to 125°C
Product Advantages
Fast access time and write cycle time for efficient data handling
Low power consumption to enhance system energy efficiency
Ample temperature range making it suitable for extreme environmental conditions
Key Technical Parameters
Memory Type: Volatile SRAM
Memory Format: SRAM - Asynchronous
Memory Size: 8Mbit
Memory Organization: 512K x 16
Access Time: 10 ns
Voltage - Supply: 2.4V to 3.6V
Operating Temperature: -40°C to 125°C
Quality and Safety Features
Reliable data storage in a wide range of temperatures
Long-term durability for continuous operation in industrial environments
Compatibility
Compatible with systems requiring a 44-TSOP II package and parallel interface
Flexible voltage range for compatibility with 2.4V to 3.6V logic levels
Application Areas
High-performance computing
Industrial automation systems
Networking hardware
Telecommunications equipment
Consumer electronics
Product Lifecycle
Active Product Status
Industry-standard package and interface ensuring long-term availability
Reasons to Choose This Product
High-speed operation for time-sensitive applications
Energy-efficient design
Robust operational temperature range for high-reliability demands
Industry-standard form factor for broad system compatibility
Integrated Silicon Solution Inc. reputation for high-quality semiconductor products
IS65C256AL-25ULA3-TRISSI, Integrated Silicon Solution IncIC SRAM 256KBIT PARALLEL 28SOP