Manufacturer Part Number
IS62WV6416BLL-55BLI
Manufacturer
Integrated Silicon Solution
Introduction
High-speed, low-power SRAM memory device suitable for a variety of electronic applications.
Product Features and Performance
1Mbit memory capacity
64K x 16 organization
Asynchronous SRAM technology
Access time of 55 ns
Write cycle time of 55 ns
Operates within voltage range of 2.5V to 3.6V
Supports parallel memory interface
Operating temperature range from -40°C to 85°C
Surface mount 48-TFBGA package
Product Advantages
Fast access and write times for high-speed operations
Low power consumption enhancing energy efficiency
Robust temperature range allowing use in a variety of environments
Compact BGA package for space-sensitive applications
Key Technical Parameters
Memory Format: SRAM
Memory Size: 1Mbit
Memory Organization: 64K x 16
Access Time: 55 ns
Voltage - Supply: 2.5V to 3.6V
Operating Temperature: -40°C to 85°C
Quality and Safety Features
Designed for reliable operation in extended temperature ranges
Compatibility
Compatible with a wide range of microcontrollers and processors with a parallel interface
Application Areas
Communications equipment
Consumer electronics
Automotive systems
Industrial controls
Medical devices
Product Lifecycle
The product status is active, indicating continued production and support; no indication of nearing discontinuation at the time of knowledge cutoff.
Several Key Reasons to Choose This Product
Fast memory with 55 ns access and write times for performance-critical applications
Low operational power requirements for energy-sensitive designs
Wide operating temperature range making it suitable for industrial and automotive use
Reliable and consistent data retention ensured by the manufacturer
Easy integration with a variety of systems through its parallel interface
Available in a compact 48-TFBGA package, ideal for space-constrained PCB layouts