Manufacturer Part Number
IS62WV5128BLL-55QLI
Manufacturer
Integrated Silicon Solution
Introduction
High-speed 4Mbit SRAM memory chip
Product Features and Performance
Memory Type: Volatile
Format: SRAM - Asynchronous
Technology: SRAM - Asynchronous
Size: 4Mbit
Organization: 512K x 8
Interface: Parallel
Write Cycle Time: 55ns
Access Time: 55ns
Supply Voltage: 2.5V ~ 3.6V
Operating Temperature Range: -40°C ~ 85°C
Product Advantages
Rapid write cycle and access times
Broad voltage range compatibility
Stable operation across diverse temperatures
Key Technical Parameters
Memory Size: 4Mbit
Memory Organization: 512K x 8
Write Cycle Time - Word, Page: 55ns
Access Time: 55 ns
Voltage - Supply: 2.5V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Quality and Safety Features
Robust temperature range support
Compliance with industry standards
Compatibility
Surface mount technology
32-SOIC (0.445", 11.30mm Width) package
Application Areas
Consumer electronics
Automotive
Telecommunications
Industrial control systems
Product Lifecycle
Status: Active
Fully supported with replacements and upgrades available
Several Key Reasons to Choose This Product
Efficient parallel interface for quick data management
Consistent performance in extreme temperatures
Optimal for high-speed and intensive memory applications
Long-term availability with ongoing manufacturer support
Ideal for use in a wide range of high-reliability electronics