Manufacturer Part Number
IS62WV10248DBLL-55TLI
Manufacturer
Integrated Silicon Solution, Inc. (ISSI)
Introduction
High-performance, low-power CMOS Asynchronous SRAM
Product Features and Performance
8Mbit memory capacity
1M x 8 memory organization
55ns access time
Parallel memory interface
55ns write cycle time
Wide operating voltage range of 2.4V to 3.6V
Wide operating temperature range of -40°C to 85°C
Product Advantages
Low power consumption
Fast access and write speeds
Reliable SRAM technology
Wide operating parameters
Key Technical Parameters
Memory Size: 8Mbit
Memory Organization: 1M x 8
Access Time: 55ns
Write Cycle Time: 55ns
Operating Voltage: 2.4V to 3.6V
Operating Temperature: -40°C to 85°C
Quality and Safety Features
RoHS3 compliant
44-TSOP II package
Compatibility
Surface mount 44-TSOP (0.400", 10.16mm Width) package
Compatible with a wide range of electronic systems and devices
Application Areas
Embedded systems
Industrial control
Telecommunications equipment
Consumer electronics
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available from the manufacturer
Key Reasons to Choose This Product
High-performance SRAM with fast access and write speeds
Low power consumption for energy-efficient operation
Wide operating voltage and temperature ranges for versatile use
Reliable and RoHS3 compliant design for quality and safety
Surface mount package for easy integration into various systems
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