Manufacturer Part Number
IS61WV6416DBLL-10BLI
Manufacturer
Integrated Silicon Solution, Inc. (ISSI)
Introduction
This is a 1Mbit Asynchronous SRAM (Static Random Access Memory) device manufactured by Integrated Silicon Solution, Inc. (ISSI).
Product Features and Performance
1Mbit (64K x 16) Asynchronous SRAM
10ns Access Time
10ns Write Cycle Time (Word, Page)
4V ~ 3.6V Operating Voltage
-40°C ~ 85°C Operating Temperature Range
48-TFBGA (6x8) Package
Surface Mount Mounting Type
Product Advantages
High-performance Asynchronous SRAM
Low power consumption
Wide operating temperature range
Compact 48-TFBGA package
Key Technical Parameters
Memory Size: 1Mbit
Memory Organization: 64K x 16
Memory Interface: Parallel
Memory Type: Volatile SRAM
Access Time: 10ns
Write Cycle Time: 10ns (Word, Page)
Supply Voltage: 2.4V ~ 3.6V
Quality and Safety Features
RoHS3 Compliant
Industrial-grade quality and reliability
Compatibility
This SRAM is compatible with a wide range of electronic systems and devices that require high-performance, low-power, and reliable memory solutions.
Application Areas
Embedded systems
Industrial automation and control
Telecommunications equipment
Consumer electronics
Automotive electronics
Product Lifecycle
This SRAM product is currently in active production and is not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer or authorized distributors.
Key Reasons to Choose This Product
High-performance Asynchronous SRAM with 10ns access and write cycle times.
Wide operating temperature range of -40°C to 85°C, suitable for harsh environments.
Low power consumption, contributing to energy efficiency.
Compact 48-TFBGA package, enabling space-saving designs.
RoHS3 compliance for environmentally-friendly applications.
Reliable and industrial-grade quality, ensuring long-term durability and dependability.