Manufacturer Part Number
IS61NLP25636A-200TQLI
Manufacturer
Integrated Silicon Solution
Introduction
High-speed synchronous SRAM memory chip for high-performance applications
Product Features and Performance
9Mbit memory size
256K x 36 memory organization
Synchronous, SDR SRAM technology
Parallel memory interface
Supports clock frequencies up to 200 MHz
Fast access time of 3.1 ns
Product Advantages
Low latency
High data throughput
Simple and straightforward parallel interface
Support for high-speed operations
Durable and reliable under extreme temperature conditions
Key Technical Parameters
Memory Type: Volatile SRAM
Memory Format: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -40°C ~ 85°C (TA)
Quality and Safety Features
Operating temperature range of -40°C to 85°C ensures reliability in various environments
Compatibility
Surface Mount mounting type
100-LQFP package compatible with standard PCB layouts
Application Areas
High-speed computing
Networking and telecommunications
Industrial control systems
Automotive electronics
Gaming and entertainment systems
Product Lifecycle
Active product status
Not indicated as nearing discontinuation
Several Key Reasons to Choose This Product
Optimized for systems requiring fast access and high bandwidth
Stable operation over a wide range of supply voltages
Designed for easy integration in various electronic systems
Suitable for harsh operating environments
Continuous product availability and support from Integrated Silicon Solution
IS61NLP12836B-200TQLIntegrated Silicon Solution, Inc. (ISSI)
IS61NLP102418-200B3LIISSI, Integrated Silicon Solution IncIC SRAM 18MBIT PARALLEL 165TFBGA