IS61LV6416-10T
Integrated Silicon Solution Inc
Volatile Memory IC
High-speed 1Mbit SRAM
Low latency with 10ns access time
Obsolete product status
Asynchronous SRAM technology
1Mb storage capacity
64K x 16 organization
Parallel memory interface
Write cycle time of 10ns
Operating voltage between 3.135V and 3.6V
Standard operating temperature range 0°C to 70°C
Surface-mount 44-TSOP package
Compatible with parallel interface systems
Used in high-speed data buffering and cache applications
End of lifecycle, may require alternative solutions for new designs
High speed and simplicity in design
Quality engineered for stable and reliable performance
SRAM for fast read/write operations without refresh
Not recommended for new design due to obsolescence
Search for upgrades or replacements due to discontinuation
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