Manufacturer Part Number
IS61LV12824-10TQLI
Manufacturer
Integrated Silicon Solution
Introduction
The IS61LV12824-10TQLI is a high-speed, 3Mbit SRAM memory chip with asynchronous access, designed for fast data storage and retrieval.
Product Features and Performance
Volatile SRAM memory
Asynchronous SRAM technology
3Mbit memory size
Organized as 128K x 24 bits
Parallel memory interface
Fast access time of 10 ns
Fast write cycle time word, page: 10ns
Supports a wide operating voltage range (3.135V ~ 3.6V)
Suitable for operating temperatures between -40°C to 85°C
Surface mount 100-LQFP packaging for compact integration
Product Advantages
Quick data access and processing capabilities
High-density storage solution within a small footprint
Reliable performance across a broad range of temperatures and voltages
Ease of integration into system designs due to its surface mount packaging
Key Technical Parameters
Memory Type: Volatile SRAM
Memory Size: 3Mbit
Memory Organization: 128K x 24
Access Time: 10 ns
Voltage Supply: 3.135V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Quality and Safety Features
Designed and tested to meet high safety and quality standards, ensuring reliable performance in diverse environments.
Compatibility
Compatible with various microcontrollers and digital signal processors that support a parallel memory interface.
Application Areas
Widely used in networking equipment, embedded systems, automotive electronics, and other high-speed data processing applications.
Product Lifecycle
Obsolete - This product is no longer in production due to advancements in memory technology, and replacements or upgrades may be available.
Several Key Reasons to Choose This Product
Exceptionally quick access and write times enhance system performance.
High reliability and durability for industrial applications.
Supports a wide voltage range for versatile use in various electronic systems.
Easy to mount and integrate, enabling efficient design in compact devices.
Ideal for applications requiring fast and frequent access to large volumes of data.