Manufacturer Part Number
IS61LPS51218A-200TQLI
Manufacturer
integrated-silicon-solution
Introduction
High-speed synchronous SRAM memory designed for high-throughput applications
Product Features and Performance
9Mbit SRAM memory
Synchronous operation
SRAM - Synchronous, SDR technology
Parallel memory interface
High clock frequency support up to 200 MHz
Fast access time of 3.1 ns
Product Advantages
Volatile memory ideal for temporary data storage
High-speed memory access improves system performance
Suitable for applications requiring fast and reliable data retrieval
Key Technical Parameters
Memory Type: Volatile
Memory Format: SRAM
Memory Size: 9Mbit
Memory Organization: 512K x 18
Clock Frequency: 200 MHz
Access Time: 3.1 ns
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature range: -40°C ~ 85°C
Quality and Safety Features
Operational within industrial temperature ranges
Manufactured to quality standards for reliability and longevity
Compatibility
Memory Interface: Parallel
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)
Application Areas
Suitable for telecommunications, networking, and industrial applications
Embedded systems
High-performance computing
Product Lifecycle
Active product status
Not nearing discontinuation
Replacements or upgrades should be available due to active status
Several Key Reasons to Choose This Product
High memory bandwidth supports demanding applications
Support for high clock frequencies enables faster processing times
Low access time for rapid data retrieval
Wide operating temperature suitable for harsh environments
Robust LQFP packaging for secure surface mounting
Broad compatibility with various systems due to parallel interface
IS61LPS25636T-200TQIIntegrated Silicon Solution, Inc. (ISSI)