IS45S16800F-7CTLA2-TR - ISSI, Integrated Silicon Solution Inc

Manufacturer Part Number

IS45S16800F-7CTLA2-TR

Manufacturer

integrated-silicon-solution

Introduction

The IS45S16800F-7CTLA2-TR is a high-performance 128Mbit SDRAM module designed for a wide range of applications, including consumer electronics, industrial automation, and telecommunications equipment. This DRAM chip offers exceptional speed, reliability, and power efficiency, making it a versatile solution for various memory requirements.

Product Features and Performance

128Mbit memory capacity

SDRAM technology

143MHz clock frequency

4ns access time

3V ~ 3.6V supply voltage

Operating temperature range of -40°C to 105°C

54-TSOP (0.400", 10.16mm Width) package

Product Advantages

High-speed performance for demanding applications

Low power consumption for energy-efficient designs

Wide operating temperature range for use in diverse environments

Reliable and durable construction for long-term reliability

Key Reasons to Choose This Product

Proven track record of quality and reliability

Exceptional performance-to-power ratio

Seamless integration into a wide range of systems

Competitive pricing and availability

Quality and Safety Features

Rigorous quality control and testing procedures

Compliance with industry standards and regulations

Robust design for enhanced durability and longevity

Compatibility

The IS45S16800F-7CTLA2-TR is compatible with various SDRAM-based systems and can be used as a drop-in replacement for similar memory modules.

Application Areas

Consumer electronics

Industrial automation and control systems

Telecommunications equipment

Embedded systems

Medical devices

Automotive electronics

Product Lifecycle

The IS45S16800F-7CTLA2-TR is an active product, and there are no plans for discontinuation at this time. However, as technology evolves, there may be equivalent or alternative models available in the future. If you have any questions or need further assistance, please contact our sales team through our website.