IS45S16400J-7TLA1 - ISSI, Integrated Silicon Solution Inc

Manufacturer Part Number

IS45S16400J-7TLA1

Manufacturer

Integrated Silicon Solution

Introduction

The IS45S16400J-7TLA1 is a high-performance SDRAM providing robust data management with a volatile memory type enabling quick access and processing.

Product Features and Performance

Volatile memory type best suited for quick data processing

Uses SDRAM technology, adept at enhancing the speed of data retrieval

Parallel memory interface allows high-speed data transfers

Supports a clock frequency of 143 MHz, boosting overall system responsiveness

Featuring a surface mount design, beneficial for compact and efficient device setups

Product Advantages

High transfer speeds owing to an efficient memory format and technology

Enhanced durability with operational functionality from -40°C to 85°C

Broad voltage support range from 3V to 3.6V accommodating diverse operational needs

Key Technical Parameters

Memory Type: SDRAM

Memory Size: 64Mbit

Memory Organization: 4M x 16

Clock Frequency: 143 MHz

Access Time: 5.4 ns

Voltage Supply: 3V ~ 3.6V

Operating Temperature: -40°C ~ 85°C

Quality and Safety Features

Reliable performance under extreme conditions with operating temperatures ranging from -40°C to 85°C

Meets stringent safety standards with robust packaging and quality assurance protocols

Compatibility

Compatible with varied electronics requiring parallel memory interfaces and SDRAM technology

Application Areas

Primarily used in computing systems, communication devices, and other digital applications demanding quick memory access

Product Lifecycle

Product status: Active

Not nearing discontinuation, ensuring long-term availability with support for future upgrades

Several Key Reasons to Choose This Product

High-speed performance validated by 143 MHz clock frequency and quick access time of 5.4 ns

Wide range of operating temperatures ensuring reliable performance under diverse environmental conditions

Flexible voltage supply range, which guarantees compatibility with multiple device requirements

Robust physical and operational design merging reliability with state-of-the-art memory technology