Manufacturer Part Number
IS43TR16256AL-125KBL
Manufacturer
Integrated Silicon Solution Inc.
Introduction
High-speed DDR3L SDRAM designed for advanced computing applications
Product Features and Performance
Volatile DRAM memory
4Gbit storage capacity
256M x 16 memory organization
Parallel memory interface for fast data transfer
Clock frequency at 800 MHz for rapid access and processing
15ns write cycle time aids quick write operations
20ns access time enables fast data retrieval
Supports a voltage range of 1.283V to 1.45V for energy-efficient operation
Operates reliably in temperatures ranging from 0°C to 95°C
Product Advantages
Optimized for high-performance computing
Efficient power consumption thanks to DDR3L low-voltage technology
Robust storage capacity suitable for multitasking environments
Extended temperature range for use in variable thermal conditions
Key Technical Parameters
Memory Size: 4Gbit
Memory Organization: 256M x 16
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: 0°C ~ 95°C
Quality and Safety Features
Surface-mount 96-TFBGA packaging for secure and compact integration
Compliance with the industry standards for DDR3L memory
Compatibility
Widely compatible with applications requiring high-speed and high-density SDRAM
Application Areas
Suitable for advanced computing systems, servers, and high-performance embedded platforms
Product Lifecycle
Discontinued product status
Potential alternative solutions may be required for new designs
Several Key Reasons to Choose This Product
High data bandwidth suitable for intensive computing tasks
Low power consumption extends system battery life
Large capacity to manage multiple applications simultaneously
Stable operation in a broad temperature range
Supported by Integrated Silicon Solution Inc., a reputable manufacturer in the memory segment
