Manufacturer Part Number
IS43R86400D-6TLI
Manufacturer
Integrated Silicon Solution, Inc. (ISSI)
Introduction
High-speed, low-power Synchronous Dynamic Random Access Memory (SDRAM) in 66-TSOP II package
Product Features and Performance
512Mbit memory capacity
166MHz clock frequency
700ps access time
15ns write cycle time
Parallel memory interface
64M x 8 memory organization
Operates on 2.3V to 2.7V supply voltage
Wide operating temperature range of -40°C to 85°C
Product Advantages
High-speed performance
Low-power operation
Compact 66-TSOP II package
Wide temperature range suitability
Key Technical Parameters
Memory Type: Volatile SDRAM DDR
Memory Size: 512Mbit
Memory Interface: Parallel
Clock Frequency: 166MHz
Access Time: 700ps
Write Cycle Time: 15ns
Supply Voltage: 2.3V to 2.7V
Operating Temperature: -40°C to 85°C
Quality and Safety Features
RoHS3 compliant
66-TSOP II package
Compatibility
Compatible with a wide range of electronic systems and devices that require high-speed, low-power SDRAM
Application Areas
Embedded systems
Industrial automation
Consumer electronics
Telecommunications equipment
Product Lifecycle
Currently in active production
Replacements and upgrades available as needed
Key Reasons to Choose This Product
High-speed performance for demanding applications
Low-power operation for energy-efficient designs
Wide operating temperature range for industrial and harsh environments
Compact 66-TSOP II package for space-constrained designs
RoHS3 compliance for environmental sustainability
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