Manufacturer Part Number
IS43R16160F-5TLI
Manufacturer
Integrated Silicon Solution, Inc. (ISSI)
Introduction
High-performance, low-power DDR SDRAM memory chip
Product Features and Performance
256Mbit memory capacity
DDR SDRAM technology
200MHz clock frequency
16M x 16 memory organization
700ps access time
15ns write cycle time
Parallel memory interface
3V to 2.7V operating voltage
Supports operating temperature range of -40°C to 85°C
Product Advantages
High-density memory solution
Low power consumption
Reliable performance across wide temperature range
Efficient parallel interface
Key Technical Parameters
Memory Size: 256Mbit
Memory Type: DDR SDRAM
Memory Interface: Parallel
Clock Frequency: 200MHz
Access Time: 700ps
Write Cycle Time: 15ns
Operating Voltage: 2.3V to 2.7V
Operating Temperature: -40°C to 85°C
Quality and Safety Features
RoHS3 compliant
66-TSOP II package
Compatibility
Suitable for a wide range of electronic devices and systems requiring high-performance, low-power memory
Application Areas
Embedded systems
Networking equipment
Industrial automation
Consumer electronics
Product Lifecycle
Currently in active production
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
High memory capacity and performance
Low power consumption
Wide operating temperature range
Reliable and efficient parallel interface
RoHS3 compliance for environmental safety
IS43R1616OB-6TL-TRIntegrated Silicon Solution, Inc. (ISSI)
IS43R16160F-6BLISSI, Integrated Silicon Solution IncIC DRAM 256MBIT PAR 60TFBGA