Manufacturer Part Number
IS43LR32640A-6BL
Manufacturer
Integrated Silicon Solution, Inc. (ISSI)
Introduction
This product is a 2Gbit Volatile SDRAM-DDR memory integrated circuit (IC) with a memory interface of Parallel.
Product Features and Performance
2Gbit memory capacity
SDRAM-DDR technology
Parallel memory interface
166MHz clock frequency
5ns access time
15ns write cycle time
7V to 1.95V operating voltage
Product Advantages
High-density memory capacity
Fast access and write performance
Low power consumption due to operating voltage range
Suitable for a wide range of applications that require high-speed and high-capacity memory
Key Technical Parameters
Memory Size: 2Gbit
Memory Type: Volatile SDRAM-DDR
Memory Interface: Parallel
Clock Frequency: 166MHz
Access Time: 5ns
Write Cycle Time: 15ns
Operating Voltage: 1.7V to 1.95V
Quality and Safety Features
RoHS3 Compliant
90-WBGA (8x13) package
Surface mount design
Compatibility
This memory IC is compatible with a wide range of electronic devices and systems that require high-speed and high-capacity memory.
Application Areas
Embedded systems
Networking and communication equipment
Industrial automation and control
Consumer electronics
Medical devices
Product Lifecycle
This product is currently in production and is not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
High-density 2Gbit memory capacity
Fast performance with 5ns access time and 15ns write cycle time
Low power consumption due to operating voltage range
Suitable for a wide range of applications that require high-speed and high-capacity memory
RoHS3 compliant and surface mount design for reliable and versatile integration
Ongoing production and availability of replacement or upgrade options
IS43LR32160C-6BLIISSI
IS43QR16256A-083RBLISSI, Integrated Silicon Solution IncIC DRAM 4GBIT PAR 1.2GHZ 96TWBGA
IS43QR16256A-083RBLI-TRISSI, Integrated Silicon Solution IncIC DRAM 4GBIT PAR 1.2GHZ 96TWBGA
IS43LR32800G-6BLI