Manufacturer Part Number
IS43DR16160B-3DBLI
Manufacturer
Integrated Silicon Solution, Inc. (ISSI)
Introduction
High-speed, high-density DDR2 SDRAM integrated circuit
Product Features and Performance
High-speed DDR2 SDRAM with operating frequency up to 333 MHz
256Mbit memory capacity
16M x 16-bit memory organization
Low power consumption with 1.7V to 1.9V operating voltage
Fast access time of 450 ps
Parallel memory interface
Product Advantages
High-performance DDR2 SDRAM for demanding applications
Low power consumption for energy-efficient designs
Reliable operation across wide temperature range of -40°C to 85°C
Key Technical Parameters
Memory Type: Volatile SDRAM DDR2
Memory Size: 256Mbit
Memory Organization: 16M x 16-bit
Clock Frequency: 333 MHz
Access Time: 450 ps
Write Cycle Time (Word, Page): 15ns
Operating Voltage: 1.7V to 1.9V
Operating Temperature: -40°C to 85°C
Quality and Safety Features
RoHS3 compliant
84-TWBGA (8x12.5) package
Compatibility
Compatible with DDR2 SDRAM memory systems
Application Areas
Embedded systems
Networking equipment
Industrial automation
Telecommunications
Consumer electronics
Product Lifecycle
Current product, no discontinuation planned
Readily available with continued manufacturer support
Key Reasons to Choose This Product
High-performance DDR2 SDRAM for demanding applications
Low power consumption for energy-efficient designs
Wide operating temperature range for industrial and harsh environments
Reliable and RoHS3 compliant for quality assurance
Readily available with continued manufacturer support
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