Manufacturer Part Number
IS42S32160F-75EBLI
Manufacturer
Integrated Silicon Solution, Inc. (ISSI)
Introduction
High-speed, low-power, synchronous dynamic random-access memory (SDRAM) integrated circuit.
Product Features and Performance
High-speed operation up to 133 MHz
Low power consumption
Parallel memory interface
512Mbit memory size
16M x 32 memory organization
DRAM memory type
6 ns access time
Product Advantages
Efficient power management
High-speed data transfer
Reliable and stable performance
Flexible memory configuration
Key Technical Parameters
Package: 90-TFBGA (8x13)
Mounting Type: Surface Mount
Operating Temperature: -40°C to 85°C
Supply Voltage: 3V to 3.6V
Quality and Safety Features
RoHS3 compliant
Tray packaging for protection
Compatibility
Compatible with a wide range of electronic devices and systems that require high-speed, low-power SDRAM.
Application Areas
Embedded systems
Telecommunications equipment
Industrial automation
Consumer electronics
Product Lifecycle
This product is currently in production and available for purchase. Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
High-performance and energy-efficient SDRAM
Reliable and stable operation
Flexible memory configuration options
Compliance with RoHS3 environmental standards
Compatibility with a wide range of applications
IS42S32200B-6TIntegrated Silicon Solution, Inc. (ISSI)
IS42S32160F-6TLIISSI, Integrated Silicon Solution IncIC DRAM 512MBIT PAR 86TSOP II