Manufacturer Part Number
IS42S16160G-6TL
Manufacturer
Integrated Silicon Solution, Inc. (ISSI)
Introduction
This is a high-performance 256Mbit Synchronous Dynamic Random Access Memory (SDRAM) integrated circuit from Integrated Silicon Solution, Inc. (ISSI).
Product Features and Performance
256Mbit memory capacity
16M x 16 memory organization
166MHz clock frequency
4ns access time
Parallel memory interface
DRAM memory technology
3V to 3.6V supply voltage
Product Advantages
High-speed performance for demanding applications
Large memory capacity for data-intensive tasks
Low power consumption
RoHS3 compliant for environmental compatibility
Key Technical Parameters
Memory Size: 256Mbit
Memory Organization: 16M x 16
Clock Frequency: 166MHz
Access Time: 5.4ns
Supply Voltage: 3V to 3.6V
Quality and Safety Features
RoHS3 compliant for restricted substances
54-TSOP II package for reliable surface mount installation
Compatibility
Suitable for a wide range of applications requiring high-performance, high-capacity SDRAM
Application Areas
Embedded systems
Computing and networking equipment
Industrial automation and control
Telecom and networking devices
Product Lifecycle
This product is currently in production and actively supported by the manufacturer.
Replacement or upgraded products may be available in the future as technology evolves.
Several Key Reasons to Choose This Product
High-speed performance and large memory capacity for demanding applications
Low power consumption for energy-efficient operation
Reliable and RoHS3 compliant design for quality and safety
Compatibility with a wide range of systems and applications
IS42S16160G-5TLIIntegrated Silicon Solution, Inc. (ISSI)
IS42S16160D-7BLI-TRISSI, Integrated Silicon Solution IncIC DRAM 256MBIT PAR 54TFBGA