VMM1000-01P - IXYS

Manufacturer Part Number

VMM1000-01P

Manufacturer

IXYS Corporation

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Arrays

Product Features and Performance

N-Channel (Dual) Configuration

Drain to Source Voltage (Vdss): 100V

Rds On (Max) @ Id, Vgs: 1.2Ohm @ 800A, 10V

Current Continuous Drain (Id) @ 25°C: 1000A

Vgs(th) (Max) @ Id: 4V @ 10mA

Gate Charge (Qg) (Max) @ Vgs: 2355nC @ 10V

Product Advantages

High current capacity

Low on-resistance

Dual channel design

Key Technical Parameters

Technology: MOSFET (Metal Oxide)

Operating Temperature: -40°C ~ 175°C (TJ)

Packaging: Y3-Li

Quality and Safety Features

Chassis Mount Mounting Type

Manufacturer's packaging: Y3-Li

Compatibility

Base Product Number: VMM

Package / Case: Y3-Li

Supplier Device Package: Y3-Li

Application Areas

Suitable for high-current, high-voltage applications

Product Lifecycle

Current product, no information on discontinuation or replacements

Key Reasons to Choose This Product

High current capacity up to 1000A

Low on-resistance of 1.2Ohm

Dual channel design for redundancy

Wide operating temperature range of -40°C to 175°C