Manufacturer Part Number
VKM60-01P1
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Products
Transistors FETs, MOSFETs Arrays
Product Features and Performance
RoHS3 Compliant
Through Hole Mounting
HiPerFET Series
4 N-Channel (Half Bridge) Configuration
MOSFET (Metal Oxide) Technology
Operating Temperature: -40°C to 150°C (TJ)
Power Rating: 300W (Max)
Drain to Source Voltage (Vdss): 100V
On-Resistance (Rds(on)): 25mOhm @ 500mA, 10V
Continuous Drain Current (Id): 75A @ 25°C
Input Capacitance (Ciss): 4500pF @ 25V
Gate Threshold Voltage (Vgs(th)): 4V @ 4mA
Gate Charge (Qg): 260nC @ 10V
Product Advantages
High Power Density
Low On-Resistance
Wide Operating Temperature Range
Efficient Heat Dissipation
Key Technical Parameters
Manufacturer's Packaging: ECO-PAC2
Package / Case: ECO-PAC2
Series: HiPerFET
Quality and Safety Features
RoHS3 Compliant
Compatibility
Through Hole Mounting
Application Areas
Power Electronics
Motor Control
Inverters
Converters
Product Lifecycle
Current Product
Availability of Replacements or Upgrades: Consult Manufacturer
Reasons to Choose This Product
High Power Density
Low On-Resistance
Wide Operating Temperature Range
Efficient Heat Dissipation
RoHS3 Compliant
Reliable and Durable