Manufacturer Part Number
VII130-06P1
Manufacturer
IXYS Corporation
Introduction
The VII130-06P1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) module from IXYS Corporation, a leading manufacturer of power semiconductor devices.
Product Features and Performance
Rated for 379W of maximum power
NPT IGBT technology for improved performance
Standard input configuration
Half-bridge configuration
Input capacitance of 4.2nF at 25V
Maximum collector-emitter voltage of 600V
Built-in NTC thermistor for temperature monitoring
Maximum collector current of 121A
Maximum collector-emitter saturation voltage of 2.9V at 15V gate voltage and 130A collector current
Product Advantages
Robust and reliable IGBT design
Efficient power handling capabilities
Integrated temperature monitoring for improved system protection
Suitable for a wide range of industrial and power electronics applications
Key Technical Parameters
Operating temperature range: -40°C to 150°C (TJ)
Collector-emitter breakdown voltage: 600V (max)
Collector current: 121A (max)
Collector-emitter saturation voltage: 2.9V (max) at 15V gate voltage and 130A collector current
Quality and Safety Features
RoHS3 compliant for environmental responsibility
Eco-friendly ECO-PAC2 packaging
Compatibility
Chassis mount configuration for easy integration
Application Areas
Industrial motor drives
Power converters
Induction heating systems
Welding equipment
UPS and renewable energy systems
Product Lifecycle
The VII130-06P1 is an active product and not nearing discontinuation.
Replacement or upgrade options may be available from IXYS Corporation.
Several Key Reasons to Choose This Product
Robust and reliable IGBT design for efficient power handling
Integrated temperature monitoring for improved system protection
Wide operating temperature range for versatile applications
RoHS3 compliance for environmental responsibility
Chassis mount configuration for easy integration into your system
VII100-06G1ABB Embedded PowerIGBT Module