Manufacturer Part Number
MCC310-16IO1
Manufacturer
Littelfuse
Introduction
The MCC310-16IO1 is a high-power SCR (Silicon Controlled Rectifier) module designed for various power control and switching applications.
Product Features and Performance
Series connection ensures uniform current distribution
Dual SCR structure
High voltage capability of 1.6 kV
High on-state current of up to 500 A RMS
Gate trigger voltage of 2 V maximum
High non-repetitive surge current ratings (9200A for 50Hz, 9800A for 60Hz)
Designed for optimal thermal performance
Product Advantages
Robust high current operation
Stable triggering characteristics
Capable of handling high surge currents effectively
Key Technical Parameters
Voltage - Off State: 1.6 kV
Current - On State (It (AV)) (Max): 320 A
Current - On State (It (RMS)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 9800A
Current - Hold (Ih) (Max): 150 mA
Operating Temperature range: -40°C to 140°C
Quality and Safety Features
Built to international standards for safety and performance
Rugged construction suitable for harsh environments
Thermal management for reliable long-term operation
Compatibility
Chassis mount module compatible with various types of heatsinks
Designed for easy integration in power electronic systems
Application Areas
Industrial motor drives
AC/DC power control
Power converters and inverters
Renewable energy systems (solar, wind)
Welding machines
Product Lifecycle
Active product status
Not indicated as nearing discontinuation
Replacement and upgrade options not specified but typically available for active products
Several Key Reasons to Choose This Product
High current handling capacity fit for demanding applications
High voltage and surge current ratings ensure robustness in harsh conditions
Minimal gate trigger requirements facilitate controlled and efficient switching
Stable thermal performance enhances reliability and extends product life
Backed by Littelfuse’s reputation for quality and performance in power semiconductors
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