Manufacturer Part Number
IXYH50N120C3D1
Manufacturer
IXYS Corporation
Introduction
High-power IGBT transistor for industrial power electronics applications
Product Features and Performance
1200V blocking voltage
90A continuous collector current
210A pulsed collector current
Low conduction and switching losses
Fast switching speed
Wide operating temperature range (-55°C to 150°C)
Robust design for reliable operation
Product Advantages
Efficient power conversion
High-current handling capability
Excellent thermal performance
Reliable and durable
Key Technical Parameters
Collector-Emitter Voltage (VCES): 1200V
Collector Current (IC): 90A
Pulsed Collector Current (ICM): 210A
On-State Voltage (VCE(on)): 4V @ 15V, 50A
Reverse Recovery Time (trr): 195ns
Gate Charge (Qg): 142nC
Quality and Safety Features
RoHS3 compliant
Designed for industrial safety standards
Compatibility
Compatible with standard IGBT gate driver circuits
Application Areas
Industrial motor drives
Power supplies
Induction heating
Welding equipment
Uninterruptible power supplies (UPS)
Product Lifecycle
This product is an active and widely used IGBT in the IXYS portfolio.
Replacement or upgraded models may become available in the future as technology advances.
Key Reasons to Choose This Product
High-performance IGBT with excellent power handling and efficiency
Reliable and durable design for industrial applications
Wide operating temperature range for versatile use
Compatibility with standard gate driver circuits for easy integration
RoHS3 compliance for environmental sustainability
