Manufacturer Part Number
IXGN100N120
Manufacturer
IXYS Corporation
Introduction
IXGN100N120 is a high-power insulated-gate bipolar transistor (IGBT) module from IXYS Corporation.
Product Features and Performance
1200V Collector-Emitter Voltage Rating
160A Collector Current Rating
Single IGBT Configuration
Chassis Mount Packaging
Product Advantages
Robust and reliable high-power performance
Efficient power conversion and control
Compact and easy to integrate design
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1200V
Current Collector (Ic) (Max): 160A
Mounting Type: Chassis Mount
Manufacturer's Packaging: SOT-227B
Quality and Safety Features
Rigorous quality control and testing
Ensures safe and reliable operation
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Industrial motor drives
Power supplies
Inverters
Welding equipment
Other high-power electronic systems
Product Lifecycle
Currently available
No plans for discontinuation
Replacement and upgrade options may be available
Key Reasons to Choose This Product
Robust and reliable high-power performance
Efficient power conversion and control
Compact and easy to integrate design
Rigorous quality control and safety features
Compatibility with a wide range of applications