Manufacturer Part Number
IXGH24N170
Manufacturer
IXYS Corporation
Introduction
High-power, high-voltage insulated gate bipolar transistor (IGBT)
Product Features and Performance
1700V collector-emitter breakdown voltage
50A continuous collector current
250W power dissipation
NPT IGBT technology
Low Vce(on) of 3.3V @ 15V, 24A
Fast switching with turn-on/off times of 42ns/200ns
106nC gate charge
Product Advantages
Robust design for high-power applications
Efficient power conversion with low conduction losses
Reliable and durable performance
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1700V
Current Collector (Ic) (Max): 50A
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 24A
Gate Charge: 106nC
Current Collector Pulsed (Icm): 150A
Td (on/off) @ 25°C: 42ns/200ns
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 150°C
Compatibility
TO-247-3 package
Suitable for a variety of high-power applications
Application Areas
Power conversion
Motor drives
Inverters
Welding equipment
Induction heating
High-power industrial applications
Product Lifecycle
Current production part
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Robust and reliable IGBT design
High voltage and current capabilities
Efficient power conversion with low conduction losses
Fast switching performance
Wide operating temperature range
RoHS3 compliance for environmental responsibility
IXGH22N140C3IXYS / Littelfuse