Manufacturer Part Number
IXGH16N60B2D1
Manufacturer
IXYS Corporation
Introduction
High-performance IGBT (Insulated Gate Bipolar Transistor) designed for high-efficiency power conversion applications.
Product Features and Performance
PT (Punch Through) IGBT technology for fast switching and low conduction losses
High current capability up to 40A
Low on-state voltage (Vce(on)) of 1.95V
Fast switching with reverse recovery time (trr) of 30ns
Wide operating temperature range of -55°C to 150°C
Product Advantages
Optimized for high-efficiency power conversion
Excellent switching performance and low losses
Robust design for reliable operation
Suitable for various power applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600V
Collector Current (Max): 40A
Collector Current (Pulsed): 100A
Gate Charge: 24nC
Switching Energy: 160μJ (on), 120μJ (off)
Switching Times (Td on/off): 18ns/73ns
Quality and Safety Features
TO-247AD package for reliable thermal management
Designed and manufactured to high quality standards
Compatibility
Compatible with a wide range of power electronics applications and systems.
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial power electronics
Renewable energy systems
Product Lifecycle
This IGBT model is currently in production and available for purchase. Replacement or upgraded models may be available in the future.
Key Reasons to Choose This Product
High performance and efficiency for power conversion applications
Fast switching and low conduction losses for improved system efficiency
Robust design and wide operating temperature range for reliable operation
Suitable for a variety of power electronics applications
Manufactured to high quality standards for dependable performance
IXGH20N120A2IXYS / Littelfuse