Manufacturer Part Number
IXFR200N10P
Manufacturer
IXYS Corporation
Introduction
The IXFR200N10P is a high-performance N-channel MOSFET transistor designed for power electronics and industrial applications.
Product Features and Performance
100V drain-to-source voltage rating
9mΩ maximum on-resistance at 100A, 10V
133A continuous drain current at 25°C case temperature
300W maximum power dissipation
Wide operating temperature range of -55°C to 175°C
Low gate charge of 235nC at 10V
Fast switching capabilities
Product Advantages
Excellent performance for high-power, high-efficiency applications
Robust design and wide temperature range for industrial use
Efficient heat dissipation through ISOPLUS247 package
Suitable for various power conversion and control applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 9mΩ
Continuous Drain Current (Id): 133A
Power Dissipation (Pd): 300W
Input Capacitance (Ciss): 7600pF
Gate Charge (Qg): 235nC
Quality and Safety Features
RoHS3 compliant
Reliable performance in industrial environments
Designed and manufactured to high quality standards
Compatibility
Compatible with various power electronics and industrial control applications
Application Areas
Power converters and inverters
Motor drives
Welding equipment
Industrial automation and control systems
Product Lifecycle
Current product, no discontinuation or replacement plans
Key Reasons to Choose This Product
Exceptional performance and efficiency for high-power applications
Robust design and wide temperature range for industrial use
Efficient heat dissipation through ISOPLUS247 package
Suitable for a wide range of power conversion and control applications
Reliable and high-quality product from a reputable manufacturer
