Manufacturer Part Number
IXFK80N50P
Manufacturer
IXYS Corporation
Introduction
The IXFK80N50P is a high-performance N-channel MOSFET transistor designed for power switching and control applications.
Product Features and Performance
High drain-to-source voltage of 500V
Low on-resistance of 65mΩ @ 40A, 10V
High continuous drain current of 80A (Tc)
Wide operating temperature range of -55°C to 150°C
Low gate charge of 197nC @ 10V
High power dissipation of 1040W (Tc)
Product Advantages
Excellent performance for power switching and control
Robust and reliable design
Suitable for a wide range of applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 65mΩ @ 40A, 10V
Continuous Drain Current (Id): 80A (Tc)
Input Capacitance (Ciss): 12700pF @ 25V
Power Dissipation (Pd): 1040W (Tc)
Quality and Safety Features
RoHS3 compliant
Meets stringent quality and safety standards
Compatibility
Through-hole mounting (TO-264AA package)
Suitable for a wide range of power electronics applications
Application Areas
Power switching and control
Motor drives
Inverters
Switching power supplies
Industrial and consumer electronics
Product Lifecycle
Current production model
Replacements and upgrades are available
Key Reasons to Choose This Product
Excellent performance and reliability for power switching and control
Wide operating temperature range and high power dissipation
Low on-resistance and gate charge for efficient operation
Robust and reliable design suitable for a variety of applications
RoHS3 compliance and quality assurance
