IXDN602D2TR - IXYS Integrated Circuits Division

Manufacturer Part Number

IXDN602D2TR

Manufacturer

littelfuse

Introduction

The IXDN602D2TR is a high-performance, dual-channel driver designed for efficient power management and gate driving applications. With advanced features and operational efficiency, it is ideal for driving IGBTs, and N-Channel and P-Channel MOSFETs within power management circuits.

Product Features and Performance

Low-Side, Independent Channel Configuration

Supports IGBT, N-Channel, P-Channel MOSFET Gate driving

Supply Voltage Range: 4.5V ~ 35V

Logic Voltage levels: VIL = 0.8V, VIH = 3V

High Output Current Capability: 2A peak for both source and sink

Non-Inverting Input Type

Fast Rise and Fall Times: Typical 7.5ns rise, 6.5ns fall

High Operating Temperature Range: -55°C ~ 150°C (TJ)

Product Advantages

Dual independent driving channels offer flexibility in applications

Broad voltage range compatibility for versatile system integration

High-speed operation reduces switching losses, improving efficiency

Capable of driving a wide range of power devices

Robust design ensures reliability under extreme conditions

Key Technical Parameters

Number of Drivers: 2

Voltage Supply: 4.5V ~ 35V

Current Peak Output (Source, Sink): 2A, 2A

Rise / Fall Time (Typ): 7.5ns, 6.5ns

Operating Temperature: -55°C ~ 150°C

Quality and Safety Features

High thermal and electrical limits for enhanced reliability

Surface Mount technology for robust physical attachment

Compatibility

Compatible with a wide range of IGBTs, N-Channel, and P-Channel MOSFETs

Flexible logic level compatibility for easier system integration

Application Areas

Power Management circuits

Motor Control systems

Inverter and Converter technologies

High-efficiency power supply units

Product Lifecycle

Status: Active

Not currently nearing discontinuation, no indication of pending upgrades or replacements

Several Key Reasons to Choose This Product

Dual-channel flexibility supports complex power management tasks

Wide voltage range and high-drive current capability enhance device performance

Fast switching speeds minimize power losses for improved system efficiency

High reliability and robustness under extreme conditions

Versatile compatibility with various gate types and logic levels for broad application scope