Manufacturer Part Number
FMM65-015P
Manufacturer
IXYS Corporation
Introduction
This product is a dual N-Channel MOSFET from IXYS Corporation, designed for use in a variety of power electronics applications.
Product Features and Performance
Drain to Source Voltage (Vdss) of 150V
On-resistance (Rds(on)) of 22mΩ @ 50A, 10V
Continuous Drain Current (Id) of 65A @ 25°C
Gate Threshold Voltage (Vgs(th)) of 4V @ 1mA
Gate Charge (Qg) of 230nC @ 10V
Operating Temperature range of -55°C to 175°C (TJ)
MOSFET (Metal Oxide Semiconductor Field Effect Transistor) technology
Product Advantages
High current handling capability
Low on-resistance for efficient power conversion
Wide operating temperature range
Dual-channel configuration for compact design
Key Technical Parameters
Drain to Source Voltage (Vdss): 150V
On-resistance (Rds(on)): 22mΩ @ 50A, 10V
Continuous Drain Current (Id): 65A @ 25°C
Gate Threshold Voltage (Vgs(th)): 4V @ 1mA
Gate Charge (Qg): 230nC @ 10V
Operating Temperature range: -55°C to 175°C (TJ)
Quality and Safety Features
RoHS3 compliant
ISOPLUS i4-PAC package for improved thermal performance and reliability
Compatibility
Through-hole mounting
Compatible with various power electronics applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial automation
Renewable energy systems
Product Lifecycle
Current production model, not nearing discontinuation
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
High current handling and low on-resistance for efficient power conversion
Wide operating temperature range for versatile applications
Dual-channel configuration for compact design
Reliable ISOPLUS i4-PAC package
RoHS3 compliance for environmental sustainability
