Manufacturer Part Number
FMM150-0075P
Manufacturer
IXYS Corporation
Introduction
High-power dual N-channel MOSFET in ISOPLUS i4-PAC package
Product Features and Performance
Drain to Source Voltage (Vdss): 75V
Continuous Drain Current (Id) @ 25°C: 150A
On-State Resistance (Rds(on)) @ 120A, 10V: 4.2mOhm
Operating Temperature Range: -55°C to 175°C
Gate Charge (Qg) @ 10V: 225nC
Product Advantages
High current carrying capability
Low on-state resistance for high efficiency
Wide operating temperature range
Dual MOSFET configuration in compact package
Key Technical Parameters
Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
Configuration: 2 N-Channel (Dual)
Threshold Voltage (Vgs(th)) @ 1mA: 4V
Package: ISOPLUS i4-PAC (Through Hole)
Quality and Safety Features
Robust MOSFET design for reliable performance
Compliance with industry safety standards
Compatibility
Suitable for use in high-power switching applications, such as power supplies, motor drives, and industrial electronics
Application Areas
Power electronics
Motor control
Industrial automation
Telecommunications
Renewable energy systems
Product Lifecycle
Currently in active production, with no plans for discontinuation. Replacement or upgrade options available from the manufacturer.
Key Reasons to Choose This Product
High current handling capacity
Low on-state resistance for improved efficiency
Wide operating temperature range for versatile applications
Dual MOSFET configuration for design flexibility
Reliable and robust performance
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