Manufacturer Part Number
DSEI2X31-12P
Manufacturer
IXYS Corporation
Introduction
High power density semiconductor devices
Suitable for high power applications
Product Features and Performance
Dual diode configuration
Fast recovery time of 50 ns
High reverse voltage rating of 1200 V
High average rectified current of 28 A per diode
Wide operating temperature range from -40°C to 150°C
Product Advantages
Compact ECO-PAC1 package design
Efficient thermal management
High power handling capability
Reliable performance in harsh environments
Key Technical Parameters
Reverse Leakage Current: 750 A @ 1200 V
Forward Voltage Drop: 2.55 V @ 30 A
Reverse Recovery Time: 50 ns
Reverse Voltage Rating: 1200 V
Average Rectified Current: 28 A per diode
Quality and Safety Features
Compliant with relevant industry standards
Robust construction for high reliability
Stringent quality control measures
Compatibility
Suitable for a wide range of high power applications
Can be used in various power conversion and control systems
Application Areas
Power supplies
Motor drives
Welding equipment
Induction heating systems
Industrial automation and control
Product Lifecycle
This product is currently in active production
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
High power handling capability
Fast recovery time for efficient performance
Wide operating temperature range for versatile applications
Compact and efficient package design
Reliable and durable construction for long-term use
