Manufacturer Part Number
DCG85X1200NA
Manufacturer
IXYS Corporation
Introduction
This product is a Discrete Semiconductor product, specifically a Diodes - Rectifiers - Array from IXYS Corporation.
Product Features and Performance
RoHS3 Compliant
SOT-227B package
Silicon Carbide (SiC) Schottky technology
Reverse Leakage Current of 400A @ 1200V
Forward Voltage of 1.8V @ 40A
Operating Temperature Range of -40°C to 175°C
Zero Reverse Recovery Time (trr)
Maximum Reverse Voltage of 1200V
Average Rectified Current of 43A per Diode
2 Independent Diode Configuration
Chassis Mount Mounting Type
Product Advantages
High efficiency and low power loss due to SiC Schottky technology
Compact SOT-227B package
Wide operating temperature range
Excellent reverse recovery characteristics with zero reverse recovery time
Key Technical Parameters
Reverse Leakage Current: 400A @ 1200V
Forward Voltage: 1.8V @ 40A
Reverse Voltage: 1200V
Average Rectified Current: 43A per Diode
Diode Configuration: 2 Independent
Mounting Type: Chassis Mount
Quality and Safety Features
RoHS3 Compliant
Reliable SiC Schottky technology
Compatibility
This product is compatible with various applications that require high-performance, fast-switching rectifier diodes.
Application Areas
Power supplies
Power converters
Motor drives
Welding equipment
Induction heating
Industrial automation
Product Lifecycle
This product is an active and currently available part from IXYS Corporation. There are no indications of it being nearing discontinuation, and replacement or upgrade options may be available.
Key Reasons to Choose This Product
High efficiency and low power loss due to SiC Schottky technology
Compact SOT-227B package for space-constrained applications
Wide operating temperature range of -40°C to 175°C
Excellent reverse recovery characteristics with zero reverse recovery time
Reliable and RoHS3 compliant design