Manufacturer Part Number
IRFF9130
Manufacturer
Harris Corporation
Introduction
The IRFF9130 is a discrete semiconductor product that belongs to the Transistors - FETs, MOSFETs - Single category.
Product Features and Performance
N-Channel MOSFET
Drain to Source Voltage (Vdss) of 100V
Maximum Gate-to-Source Voltage (Vgs) of ±20V
Maximum On-Resistance (Rds(on)) of 300mΩ @ 3A, 10V
Continuous Drain Current (Id) of 6.5A at 25°C (Tc)
Maximum Input Capacitance (Ciss) of 500pF @ 25V
Maximum Power Dissipation of 25W (Tc)
Gate Charge (Qg) of 45nC @ 10V
Product Advantages
High-performance MOSFET with low on-resistance and high drain current capability
Wide operating temperature range of -55°C to 150°C (TJ)
Suitable for a variety of power switching and control applications
Key Technical Parameters
MOSFET Technology
N-Channel
Threshold Voltage (Vgs(th)) of 4V @ 250A
Drive Voltage (Max Rds(on), Min Rds(on)) of 10V
Quality and Safety Features
TO-205AF (TO-39) metal can package
Suitable for through-hole mounting
Compatibility
Compatible with various power electronics and control systems
Application Areas
Power switching and control
Motor drives
Power supplies
Inverters
Amplifiers
Product Lifecycle
Current product
Replacements or upgrades may be available
Key Reasons to Choose This Product
High-performance MOSFET with low on-resistance and high current capability
Wide operating temperature range
Suitable for a variety of power electronics applications
Reliable metal can package
